Temperature-dependent characteristics of AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors
Temperature-dependent characteristics of AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors
Nơi đăng:
2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices,
Số: ,
Trang: 234-238,
Năm: 2014,
Loại bài viết: Bài báo,
Quốc gia: Japan.