Temperature-dependent characteristics of AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors

Temperature-dependent characteristics of AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors
Nơi đăng: 2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, Số: , Trang: 234-238, Năm: 2014, Loại bài viết: Bài báo, Quốc gia: Japan.